K6F1616U6A-EF550 vs R1LV1616RBG-5SR feature comparison

K6F1616U6A-EF550 Samsung Semiconductor

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R1LV1616RBG-5SR Renesas Electronics Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC RENESAS TECHNOLOGY CORP
Part Package Code BGA BGA
Package Description VFBGA, BGA, BGA48,6X8,30
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
JESD-30 Code R-PBGA-B48 R-PBGA-B48
Length 9.5 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 1MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA BGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1 mm
Supply Voltage-Max (Vsup) 3.3 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 7.5 mm
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Alternate Memory Width 8
I/O Type COMMON
JESD-609 Code e0
Output Characteristics 3-STATE
Package Equivalence Code BGA48,6X8,30
Peak Reflow Temperature (Cel) NOT SPECIFIED
Standby Current-Max 0.000006 A
Standby Voltage-Min 2.7 V
Supply Current-Max 0.04 mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare K6F1616U6A-EF550 with alternatives

Compare R1LV1616RBG-5SR with alternatives