K5A3340YBC-T7550
vs
AM42BDS6408GBD9IT
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ADVANCED MICRO DEVICES INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TFBGA,
|
LFBGA, BGA93,10X12,32
|
| Pin Count |
69
|
93
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Additional Feature |
SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8
|
SRAM IS ORGANISED AS 512K X 16
|
| JESD-30 Code |
R-PBGA-B69
|
R-PBGA-B93
|
| Length |
11 mm
|
11.6 mm
|
| Memory Density |
33554432 bit
|
67108864 bit
|
| Memory IC Type |
MEMORY CIRCUIT
|
MEMORY CIRCUIT
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
69
|
93
|
| Number of Words |
2097152 words
|
4194304 words
|
| Number of Words Code |
2000000
|
4000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
2MX16
|
4MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
LFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, LOW PROFILE, FINE PITCH
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.4 mm
|
| Supply Voltage-Max (Vsup) |
3.3 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
1.65 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
8 mm
|
8 mm
|
| Base Number Matches |
1
|
2
|
| Access Time-Max |
|
70 ns
|
| Mixed Memory Type |
|
FLASH+SRAM
|
| Package Equivalence Code |
|
BGA93,10X12,32
|
| Standby Current-Max |
|
0.00001 A
|
| Supply Current-Max |
|
0.015 mA
|
|
|
|
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