K4T56163QI-ZCE60
vs
HYI18T256160BC-3.7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
QIMONDA AG
Part Package Code
BGA
BGA
Package Description
TFBGA,
TFBGA, BGA84,9X15,32
Pin Count
84
84
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.24
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.45 ns
0.5 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Length
13 mm
12.5 mm
Memory Density
268435456 bit
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
DDR2 DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
84
84
Number of Words
16777216 words
16777216 words
Number of Words Code
16000000
16000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Organization
16MX16
16MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9 mm
10 mm
Base Number Matches
1
1
Clock Frequency-Max (fCLK)
266 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
Moisture Sensitivity Level
3
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Output Characteristics
3-STATE
Package Equivalence Code
BGA84,9X15,32
Refresh Cycles
8192
Sequential Burst Length
4,8
Standby Current-Max
0.033 A
Supply Current-Max
0.135 mA
Temperature Grade
INDUSTRIAL
Compare K4T56163QI-ZCE60 with alternatives
Compare HYI18T256160BC-3.7 with alternatives