K4T1G164QE-HLF70 vs K4T1G164QF-BPF70 feature comparison

K4T1G164QE-HLF70 Samsung Semiconductor

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K4T1G164QF-BPF70 Samsung Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TFBGA, BGA84,9X15,32 FBGA, BGA84,9X15,32
Pin Count 84
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz 400 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 12.5 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84 84
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 64MX16 64MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA FBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8 4,8
Standby Current-Max 0.005 A 0.005 A
Supply Current-Max 0.2 mA 0.18 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 7.5 mm
Base Number Matches 1 1

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Compare K4T1G164QF-BPF70 with alternatives