K4T1G164QD-ZCE6 vs HYB18TC1G160C2F-3S feature comparison

K4T1G164QD-ZCE6 Samsung Semiconductor

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HYB18TC1G160C2F-3S Qimonda AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC QIMONDA AG
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Moisture Sensitivity Level 3
Number of Terminals 84 84
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Organization 64MX16 64MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Sequential Burst Length 4,8 4,8
Standby Current-Max 0.015 A 0.019 A
Supply Current-Max 0.255 mA 0.194 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Part Package Code BGA
Package Description TFBGA, BGA84,9X15,32
Pin Count 84
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Length 12.5 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Width 8 mm

Compare K4T1G164QD-ZCE6 with alternatives

Compare HYB18TC1G160C2F-3S with alternatives