K4T1G084QF-BCE70
vs
K4T1G084QD-ZCE7T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
TFBGA, BGA60,9X11,32
FBGA, BGA60,9X11,32
Pin Count
60
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.4 ns
0.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
400 MHz
400 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
4,8
4,8
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
Length
9.5 mm
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
8
8
Number of Functions
1
Number of Ports
1
Number of Terminals
60
60
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
128MX8
128MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
FBGA
Package Equivalence Code
BGA60,9X11,32
BGA60,9X11,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
4,8
Supply Current-Max
0.16 mA
0.265 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
7.5 mm
Base Number Matches
1
1
Moisture Sensitivity Level
3
Compare K4T1G084QF-BCE70 with alternatives
Compare K4T1G084QD-ZCE7T with alternatives