K4T1G084QD-ZCD5T
vs
K4T1G084QD-ZLD50
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA, BGA60,9X11,32
TFBGA, BGA60,9X11,32
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Time-Max
0.5 ns
0.5 ns
Clock Frequency-Max (fCLK)
267 MHz
267 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
4,8
4,8
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
8
8
Moisture Sensitivity Level
3
Number of Terminals
60
60
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Organization
128MX8
128MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA60,9X11,32
BGA60,9X11,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
4,8
4,8
Supply Current-Max
0.24 mA
0.24 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Part Package Code
BGA
Pin Count
60
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Length
11 mm
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
95 °C
Operating Temperature-Min
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Temperature Grade
OTHER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9 mm
Compare K4T1G084QD-ZCD5T with alternatives
Compare K4T1G084QD-ZLD50 with alternatives