K4T1G084QC-ZLD5 vs MT47H64M8CB-37EAT:B feature comparison

K4T1G084QC-ZLD5 Samsung Semiconductor

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MT47H64M8CB-37EAT:B Micron Technology Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Package Description FBGA, BGA60,9X11,32 TFBGA,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Time-Max 0.5 ns 0.5 ns
Clock Frequency-Max (fCLK) 267 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
JESD-609 Code e1 e1
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 8 8
Moisture Sensitivity Level 3
Number of Terminals 60 60
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Organization 128MX8 128MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Part Package Code BGA
Pin Count 60
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Length 12 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 °C
Operating Temperature-Min -40 °C
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Temperature Grade INDUSTRIAL
Width 10 mm

Compare K4T1G084QC-ZLD5 with alternatives

Compare MT47H64M8CB-37EAT:B with alternatives