K4S643233F-DE1H
vs
K4S643233H-HC750
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
LFBGA, BGA90,9X15,32
LFBGA,
Pin Count
90
90
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
7 ns
6 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
105 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
R-PBGA-B90
Length
13 mm
13 mm
Memory Density
67108864 bit
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
SYNCHRONOUS DRAM
Memory Width
32
32
Moisture Sensitivity Level
3
3
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
90
90
Number of Words
2097152 words
2097152 words
Number of Words Code
2000000
2000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
70 °C
Operating Temperature-Min
-25 °C
-25 °C
Organization
2MX32
2MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
LFBGA
LFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH
GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.4 mm
1.4 mm
Self Refresh
YES
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.0005 A
Supply Current-Max
0.12 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
11 mm
8 mm
Base Number Matches
1
1
Compare K4S643233F-DE1H with alternatives
Compare K4S643233H-HC750 with alternatives