K4S643232H-TL500 vs K4S643232E-TE50 feature comparison

K4S643232H-TL500 Samsung Semiconductor

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K4S643232E-TE50 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2 TSOP2
Package Description TSSOP, TSOP2, TSSOP86,.46,20
Pin Count 86 86
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 4.5 ns 4.5 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G86 R-PDSO-G86
Length 22.22 mm 22.22 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 86 86
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -25 °C
Organization 2MX32 2MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSSOP TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-609 Code e0
Output Characteristics 3-STATE
Package Equivalence Code TSSOP86,.46,20
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.19 mA
Terminal Finish TIN LEAD

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