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K4S641632C-TC100 vs HYB39S64160T-80 feature comparison

K4S641632C-TC100 Samsung Semiconductor

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HYB39S64160T-80 Infineon Technologies AG

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INFINEON TECHNOLOGIES AG
Part Package Code TSOP2 TSOP2
Package Description TSOP2, TSOP54,.46,32 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
Pin Count 54 54
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 7 ns 7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 66 MHz 125 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PDSO-G54 R-PDSO-G54
Length 22.22 mm 22.22 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 4MX16 4MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Equivalence Code TSOP54,.46,32 TSOP54,.46,32
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.001 A 0.002 A
Supply Current-Max 0.11 mA 0.175 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 1 2
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)
Memory » DRAMs
Memory » DRAMs

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