K4S563233F-FG1L0 vs K4S563233F-HL1H0 feature comparison

K4S563233F-FG1L0 Samsung Semiconductor

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K4S563233F-HL1H0 Samsung Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, TFBGA,
Pin Count 90 90
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 7 ns 7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B90 R-PBGA-B90
Length 13 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -25 °C -25 °C
Organization 8MX32 8MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm 8 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3

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Compare K4S563233F-HL1H0 with alternatives