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K4S561632E-TL75 vs H57V2562GTR-75J feature comparison

K4S561632E-TL75 Samsung Semiconductor

Buy Now Datasheet

H57V2562GTR-75J SK Hynix Inc

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code TSOP2 TSOP2
Package Description 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 TSOP2, TSOP54,.46,32
Pin Count 54 54
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PDSO-G54 R-PDSO-G54
JESD-609 Code e0 e6
Length 22.22 mm 22.22 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 16MX16 16MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Equivalence Code TSOP54,.46,32 TSOP54,.46,32
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.194 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.002 A 0.002 A
Supply Current-Max 0.18 mA 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 20
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Alternate Memory Width 16
Terminal Finish Tin/Bismuth (Sn/Bi)
Memory » DRAMs
Memory » DRAMs

Compare K4S561632E-TL75 with alternatives

Compare H57V2562GTR-75J with alternatives