K4S283233F-MI1H
vs
HY5V22LF-PI
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SK HYNIX INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
LFBGA, BGA90,9X15,32
|
TFBGA, BGA90,9X15,32
|
| Pin Count |
90
|
90
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
8542.32.00.02
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
6 ns
|
6 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| Clock Frequency-Max (fCLK) |
105 MHz
|
100 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
1,2,4,8
|
1,2,4,8
|
| JESD-30 Code |
R-PBGA-B90
|
R-PBGA-B90
|
| JESD-609 Code |
e0
|
e1
|
| Length |
13 mm
|
13 mm
|
| Memory Density |
134217728 bit
|
134217728 bit
|
| Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
| Memory Width |
32
|
32
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
90
|
90
|
| Number of Words |
4194304 words
|
4194304 words
|
| Number of Words Code |
4000000
|
4000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
4MX32
|
4MX32
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
LFBGA
|
TFBGA
|
| Package Equivalence Code |
BGA90,9X15,32
|
BGA90,9X15,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, LOW PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
4096
|
4096
|
| Seated Height-Max |
1.45 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Sequential Burst Length |
1,2,4,8,FP
|
1,2,4,8,FP
|
| Standby Current-Max |
0.002 A
|
0.001 A
|
| Supply Current-Max |
0.22 mA
|
0.14 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN LEAD
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
11 mm
|
8 mm
|
| Base Number Matches |
1
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
20
|
|
|
|
Compare K4S283233F-MI1H with alternatives
Compare HY5V22LF-PI with alternatives