We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

K4S283233F-MI1H vs HY5V22F-P feature comparison

K4S283233F-MI1H Samsung Semiconductor

Buy Now Datasheet

HY5V22F-P SK Hynix Inc

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code BGA BGA
Package Description LFBGA, BGA90,9X15,32 TFBGA, BGA90,9X15,32
Pin Count 90 90
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 6 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 105 MHz 100 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
JESD-609 Code e0 e1
Length 13 mm 13 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 4MX32 4MX32
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LFBGA TFBGA
Package Equivalence Code BGA90,9X15,32 BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1.45 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.002 A 0.001 A
Supply Current-Max 0.22 mA 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 3 V
Supply Voltage-Nom (Vsup) 3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish TIN LEAD TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 11 mm 8 mm
Base Number Matches 1 1
Memory » DRAMs
Memory » DRAMs

Compare K4S283233F-MI1H with alternatives

Compare HY5V22F-P with alternatives