K4S283233E-HG1H0 vs K4S283233E-FE1H0 feature comparison

K4S283233E-HG1H0 Samsung Semiconductor

Buy Now Datasheet

K4S283233E-FE1H0 Samsung Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, TFBGA,
Pin Count 90 90
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 7 ns 7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B90 R-PBGA-B90
Length 13 mm 13 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 4MX32 4MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 9 mm 9 mm
Base Number Matches 1 1

Compare K4S283233E-HG1H0 with alternatives

Compare K4S283233E-FE1H0 with alternatives