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K4S283233E-HE600 vs K4M283233H-HN750 feature comparison

K4S283233E-HE600 Samsung Semiconductor

Buy Now Datasheet

K4M283233H-HN750 Samsung Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, VFBGA, BGA90,9X15,32
Pin Count 90 90
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B90 R-PBGA-B90
JESD-609 Code e1
Length 13 mm 13 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 4MX32 4MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 9 mm 8 mm
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
Output Characteristics 3-STATE
Package Equivalence Code BGA90,9X15,32
Peak Reflow Temperature (Cel) 260
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.0005 A
Supply Current-Max 0.13 mA
Memory » DRAMs
Memory » DRAMs

Compare K4S283233E-HE600 with alternatives

Compare K4M283233H-HN750 with alternatives