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K4S161622H-TC600 vs KM416S1120DT-F6 feature comparison

K4S161622H-TC600 Samsung Semiconductor

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KM416S1120DT-F6 Samsung Semiconductor

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2 TSOP2
Package Description TSOP2, TSOP2, TSOP50,.46,32
Pin Count 50 50
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Category CO2 Kg 12 12
Compliance Temperature Grade Commercial: +0C to +70C Commercial: +0C to +70C
Candidate List Date 2011-06-20
Access Mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 5.5 ns 5.5 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G50 R-PDSO-G50
Length 20.95 mm 20.95 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 50 50
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-609 Code e0
Output Characteristics 3-STATE
Package Equivalence Code TSOP50,.46,32
Refresh Cycles 2048
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.15 mA
Terminal Finish TIN LEAD
Memory » DRAMs
Memory » DRAMs

Compare K4S161622H-TC600 with alternatives

Compare KM416S1120DT-F6 with alternatives