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K4N56163QF-GC360 vs HY5PS561621ALFP-E3 feature comparison

K4N56163QF-GC360 Samsung Semiconductor

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HY5PS561621ALFP-E3 SK Hynix Inc

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code BGA BGA
Package Description TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
Pin Count 84 84
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.5 ns 0.6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 275 MHz 200 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 13 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 95 °C
Operating Temperature-Min
Organization 16MX16 16MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Supply Current-Max 0.35 mA 0.2 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 11 mm 8 mm
Base Number Matches 1 1
JESD-609 Code e1
Standby Current-Max 0.006 A
Terminal Finish TIN SILVER COPPER
Memory » DRAMs
Memory » DRAMs

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