We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

K4M56323PG-FF900 vs K4M56323LE-EL80 feature comparison

K4M56323PG-FF900 Samsung Semiconductor

Buy Now Datasheet

K4M56323LE-EL80 Samsung Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description VFBGA, BGA90,9X15,32 LFBGA, BGA90,9X15,32
Pin Count 90 90
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 7 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 111 MHz 125 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
Length 13 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min -25 °C -25 °C
Organization 8MX32 8MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA LFBGA
Package Equivalence Code BGA90,9X15,32 BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 240 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1 mm 1.4 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.0003 A 0.0012 A
Supply Current-Max 0.14 mA 0.3 mA
Supply Voltage-Max (Vsup) 1.95 V 2.7 V
Supply Voltage-Min (Vsup) 1.7 V 2.3 V
Supply Voltage-Nom (Vsup) 1.8 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm 11 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Memory » DRAMs
Memory » DRAMs

Compare K4M56323PG-FF900 with alternatives

Compare K4M56323LE-EL80 with alternatives