K4M563233G-HG75T
vs
K4M563233G-FN75
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
FBGA, BGA90,9X15,32
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.24
|
8542.32.00.24
|
Access Time-Max |
5.4 ns
|
5.4 ns
|
Clock Frequency-Max (fCLK) |
133 MHz
|
133 MHz
|
I/O Type |
COMMON
|
COMMON
|
Interleaved Burst Length |
1,2,4,8
|
1,2,4,8
|
JESD-30 Code |
R-PBGA-B90
|
R-PBGA-B90
|
JESD-609 Code |
e3
|
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
Memory Width |
32
|
32
|
Moisture Sensitivity Level |
1
|
1
|
Number of Terminals |
90
|
90
|
Number of Words |
8388608 words
|
8388608 words
|
Number of Words Code |
8000000
|
8000000
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-25 °C
|
-25 °C
|
Organization |
8MX32
|
8MX32
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
FBGA
|
FBGA
|
Package Equivalence Code |
BGA90,9X15,32
|
BGA90,9X15,32
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, FINE PITCH
|
GRID ARRAY, FINE PITCH
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Refresh Cycles |
4096
|
4096
|
Sequential Burst Length |
1,2,4,8,FP
|
1,2,4,8,FP
|
Standby Current-Max |
0.001 A
|
0.001 A
|
Supply Current-Max |
0.16 mA
|
0.16 mA
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
OTHER
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Base Number Matches |
1
|
1
|
|
|
|
Compare K4M563233G-HG75T with alternatives
Compare K4M563233G-FN75 with alternatives