K4M56163PG-RF1L0
vs
K4M56163PG-RF1L
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
VFBGA, BGA54,9X9,32
Pin Count
54
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.24
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
7 ns
Additional Feature
AUTO REFRESH
Clock Frequency-Max (fCLK)
111 MHz
111 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
1,2,4,8
1,2,4,8
JESD-30 Code
R-PBGA-B54
S-PBGA-B54
Length
11 mm
Memory Density
268435456 bit
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
SYNCHRONOUS DRAM
Memory Width
16
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
54
Number of Words
16777216 words
16777216 words
Number of Words Code
16000000
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
-25 °C
-25 °C
Organization
16MX16
16MX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
VFBGA
FBGA
Package Equivalence Code
BGA54,9X9,32
BGA54,9X9,32
Package Shape
RECTANGULAR
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Seated Height-Max
1 mm
Sequential Burst Length
1,2,4,8,FP
1,2,4,8,FP
Standby Current-Max
0.00001 A
0.00001 A
Supply Current-Max
0.065 mA
0.065 mA
Supply Voltage-Max (Vsup)
1.95 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Width
8 mm
Base Number Matches
1
1
Pbfree Code
Moisture Sensitivity Level
1
Compare K4M56163PG-RF1L0 with alternatives
Compare K4M56163PG-RF1L with alternatives