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K4M51163PC-RC90 vs K4M51163PC-RC1LT feature comparison

K4M51163PC-RC90 Samsung Semiconductor

Buy Now Datasheet

K4M51163PC-RC1LT Samsung Semiconductor

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Package Description FBGA, BGA54,9X9,32 FBGA, BGA54,9X9,32
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Time-Max 7 ns 7 ns
Clock Frequency-Max (fCLK) 111 MHz 111 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code S-PBGA-B54 S-PBGA-B54
Memory Density 536870912 bit 536870912 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Moisture Sensitivity Level 1 1
Number of Terminals 54 54
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min -25 °C -25 °C
Organization 32MX16 32MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA FBGA
Package Equivalence Code BGA54,9X9,32 BGA54,9X9,32
Package Shape SQUARE SQUARE
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.0003 A 0.0003 A
Supply Current-Max 0.15 mA 0.15 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Memory » DRAMs
Memory » DRAMs

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