K4M511633E-PL1H0
vs
K4M511633C-RF1H0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA,
VFBGA,
Pin Count
54
54
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
7 ns
7 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B54
R-PBGA-B54
JESD-609 Code
e1
Length
11.5 mm
11.5 mm
Memory Density
536870912 bit
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM
SYNCHRONOUS DRAM
Memory Width
16
16
Moisture Sensitivity Level
3
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
54
54
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
-25 °C
-25 °C
Organization
32MX16
32MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
VFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1.2 mm
1 mm
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
10 mm
10 mm
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
30
Compare K4M511633E-PL1H0 with alternatives
Compare K4M511633C-RF1H0 with alternatives