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K4H561638F-TCCC0 vs NT5DS16M16CS-5T feature comparison

K4H561638F-TCCC0 Samsung Semiconductor

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NT5DS16M16CS-5T Nanya Technology Corporation

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC NANYA TECHNOLOGY CORP
Part Package Code TSOP2 TSOP2
Package Description TSOP2, TSSOP66,.46 TSOP2, TSSOP66,.46
Pin Count 66 66
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.65 ns 0.65 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz 200 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PDSO-G66 R-PDSO-G66
JESD-609 Code e0 e3
Length 22.22 mm 22.22 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 66 66
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX16 16MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Equivalence Code TSSOP66,.46 TSSOP66,.46
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 2,4,8 2,4,8
Supply Current-Max 0.38 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.5 V 2.3 V
Supply Voltage-Nom (Vsup) 2.6 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Pitch 0.65 mm 0.65 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Memory » DRAMs
Memory » DRAMs

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Compare NT5DS16M16CS-5T with alternatives