K4H560838E-TCB3T
vs
K4H560838N-LLB30
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
TSSOP, TSSOP66,.46
TSOP2, TSSOP66,.46
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.24
8542.32.00.24
Access Time-Max
0.7 ns
0.7 ns
Clock Frequency-Max (fCLK)
166 MHz
166 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
2,4,8
2,4,8
JESD-30 Code
R-PDSO-G66
R-PDSO-G66
Memory Density
268435456 bit
268435456 bit
Memory IC Type
DDR1 DRAM
DDR1 DRAM
Memory Width
8
8
Moisture Sensitivity Level
1
Number of Terminals
66
66
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
32MX8
32MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TSSOP
TSOP2
Package Equivalence Code
TSSOP66,.46
TSSOP66,.46
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
2,4,8
2,4,8
Standby Current-Max
0.003 A
0.003 A
Supply Current-Max
0.28 mA
0.11 mA
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
GULL WING
GULL WING
Terminal Pitch
0.635 mm
0.65 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Part Package Code
TSOP2
Pin Count
66
Access Mode
FOUR BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Length
22.22 mm
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Peak Reflow Temperature (Cel)
260
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Width
10.16 mm
Compare K4H560838E-TCB3T with alternatives
Compare K4H560838N-LLB30 with alternatives