K4H560438E-VLB3
vs
K4H560438E-NCB3T
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
TSSOP, TSSOP54,.36,20
|
TSSOP, TSSOP54,.36,20
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.24
|
8542.32.00.24
|
Access Time-Max |
0.7 ns
|
0.7 ns
|
Clock Frequency-Max (fCLK) |
166 MHz
|
166 MHz
|
I/O Type |
COMMON
|
COMMON
|
Interleaved Burst Length |
2,4,8
|
2,4,8
|
JESD-30 Code |
R-PDSO-G54
|
R-PDSO-G54
|
JESD-609 Code |
e3
|
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
DDR1 DRAM
|
CACHE DRAM MODULE
|
Memory Width |
4
|
4
|
Moisture Sensitivity Level |
1
|
3
|
Number of Terminals |
54
|
54
|
Number of Words |
67108864 words
|
67108864 words
|
Number of Words Code |
64000000
|
64000000
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
64MX4
|
64MX4
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TSSOP
|
TSSOP
|
Package Equivalence Code |
TSSOP54,.36,20
|
TSSOP54,.36,20
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Refresh Cycles |
8192
|
8192
|
Sequential Burst Length |
2,4,8
|
2,4,8
|
Standby Current-Max |
0.003 A
|
0.003 A
|
Supply Current-Max |
0.26 mA
|
0.26 mA
|
Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Pitch |
0.5 mm
|
0.5 mm
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Peak Reflow Temperature (Cel) |
|
240
|
|
|
|
Compare K4H560438E-VLB3 with alternatives
Compare K4H560438E-NCB3T with alternatives