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K4H511638D-ZPB3T vs H5DU5162EFR-J3J feature comparison

K4H511638D-ZPB3T Samsung Semiconductor

Buy Now Datasheet

H5DU5162EFR-J3J SK Hynix Inc

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Package Description BGA, BGA60,9X12,40/32 VBGA, BGA60,9X12,40/32
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Time-Max 0.7 ns 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz 166 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
JESD-609 Code e3 e1
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 16 16
Moisture Sensitivity Level 1
Number of Terminals 60 60
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 32MX16 32MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA VBGA
Package Equivalence Code BGA60,9X12,40/32 BGA60,9X12,40/32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, VERY THIN PROFILE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.005 A 0.005 A
Supply Current-Max 0.38 mA 0.24 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish MATTE TIN Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 1 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Part Package Code BGA
Pin Count 60
Access Mode FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Length 12 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Time@Peak Reflow Temperature-Max (s) 20
Width 8 mm
Memory » DRAMs
Memory » DRAMs

Compare K4H511638D-ZPB3T with alternatives

Compare H5DU5162EFR-J3J with alternatives