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K4H511638D-ZIB30 vs MT46V32M16BN-6LIT:D feature comparison

K4H511638D-ZIB30 Samsung Semiconductor

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MT46V32M16BN-6LIT:D Micron Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TBGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32
Pin Count 60
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz 166 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
Length 12 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60 60
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 32MX16 32MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TBGA BGA
Package Equivalence Code BGA60,9X12,40/32 BGA60,9X12,40/32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE GRID ARRAY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.005 A 0.005 A
Supply Current-Max 0.38 mA 0.405 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10 mm
Base Number Matches 1 1
Pbfree Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish MATTE TIN
Memory » DRAMs
Memory » DRAMs

Compare K4H511638D-ZIB30 with alternatives

Compare MT46V32M16BN-6LIT:D with alternatives