K4H510438B-ULB3 vs K4H510438G-LLB30 feature comparison

K4H510438B-ULB3 Samsung Semiconductor

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K4H510438G-LLB30 Samsung Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Package Description TSSOP, TSSOP66,.46
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Time-Max 0.7 ns 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz 166 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PDSO-G66 R-PDSO-G66
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 4 4
Moisture Sensitivity Level 3 3
Number of Terminals 66 66
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX4 128MX4
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSSOP TSSOP
Package Equivalence Code TSSOP66,.46 TSSOP66,.46
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.005 A 0.005 A
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.635 mm 0.635 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
JESD-609 Code e6
Supply Current-Max 0.21 mA
Terminal Finish TIN BISMUTH

Compare K4H510438B-ULB3 with alternatives

Compare K4H510438G-LLB30 with alternatives