K4H510438B-ULB3
vs
K4H510438G-LLB30
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
TSSOP, TSSOP66,.46
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Access Time-Max
0.7 ns
0.7 ns
Clock Frequency-Max (fCLK)
166 MHz
166 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
2,4,8
2,4,8
JESD-30 Code
R-PDSO-G66
R-PDSO-G66
Memory Density
536870912 bit
536870912 bit
Memory IC Type
DDR1 DRAM
DDR1 DRAM
Memory Width
4
4
Moisture Sensitivity Level
3
3
Number of Terminals
66
66
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
128MX4
128MX4
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TSSOP
TSSOP
Package Equivalence Code
TSSOP66,.46
TSSOP66,.46
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
2,4,8
2,4,8
Standby Current-Max
0.005 A
0.005 A
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
GULL WING
GULL WING
Terminal Pitch
0.635 mm
0.635 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
JESD-609 Code
e6
Supply Current-Max
0.21 mA
Terminal Finish
TIN BISMUTH
Compare K4H510438B-ULB3 with alternatives
Compare K4H510438G-LLB30 with alternatives