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K4H510438B-TLB3 vs MT46V128M4P-6T:F feature comparison

K4H510438B-TLB3 Samsung Semiconductor

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MT46V128M4P-6T:F Micron Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code TSOP2 TSOP
Package Description TSOP2, TSSOP66,.46 TSSOP, TSSOP66,.46
Pin Count 66 66
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz 166 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PDSO-G66 R-PDSO-G66
JESD-609 Code e0 e3
Length 22.22 mm 22.22 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 4 4
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 66 66
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX4 128MX4
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSSOP
Package Equivalence Code TSSOP66,.46 TSSOP66,.46
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.005 A 0.005 A
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Pitch 0.65 mm 0.65 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Supply Current-Max 0.405 mA
Time@Peak Reflow Temperature-Max (s) 30
Memory » DRAMs
Memory » DRAMs

Compare K4H510438B-TLB3 with alternatives

Compare MT46V128M4P-6T:F with alternatives