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K4D261638K-LC40 vs HY5DV1291622TC-10 feature comparison

K4D261638K-LC40 Samsung Semiconductor

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HY5DV1291622TC-10 SK Hynix Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Package Description 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 TSOP2, TSSOP66,.46
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.6 ns 1.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 250 MHz 125 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PDSO-G66 R-PDSO-G66
Length 22.22 mm 22.225 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type GDDR1 DRAM DDR1 DRAM
Memory Width 16 16
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 66 66
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 65 °C 70 °C
Operating Temperature-Min
Organization 8MX16 8MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Equivalence Code TSSOP66,.46 TSSOP66,.46
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.045 A
Supply Current-Max 0.35 mA
Supply Voltage-Max (Vsup) 2.625 V 3.6 V
Supply Voltage-Min (Vsup) 2.375 V 3 V
Supply Voltage-Nom (Vsup) 2.5 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.65 mm 0.65 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 3 1
Part Package Code TSOP2
Pin Count 66
JESD-609 Code e0
Terminal Finish TIN LEAD
Memory » DRAMs
Memory » DRAMs

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Compare HY5DV1291622TC-10 with alternatives