K4C89363AF-GCF50
vs
IS49NLC36800-18BL
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INTEGRATED SILICON SOLUTION INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TBGA,
|
TBGA,
|
| Pin Count |
144
|
144
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Access Mode |
FOUR BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
| Access Time-Max |
0.6 ns
|
1.875 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO REFRESH
|
| JESD-30 Code |
R-PBGA-B144
|
R-PBGA-B144
|
| JESD-609 Code |
e0
|
|
| Length |
15.5 mm
|
18.5 mm
|
| Memory Density |
301989888 bit
|
301989888 bit
|
| Memory IC Type |
DDR1 DRAM
|
DDR DRAM
|
| Memory Width |
36
|
36
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
144
|
144
|
| Number of Words |
8388608 words
|
8388608 words
|
| Number of Words Code |
8000000
|
8000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
8MX36
|
8MX36
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TBGA
|
TBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE
|
| Qualification Status |
Not Qualified
|
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Self Refresh |
YES
|
|
| Supply Voltage-Max (Vsup) |
2.625 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
2.375 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
10.5 mm
|
11 mm
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare K4C89363AF-GCF50 with alternatives
Compare IS49NLC36800-18BL with alternatives