K4B2G0846D-HCH9 vs IS43TR81280A-187FBL feature comparison

K4B2G0846D-HCH9 Samsung Semiconductor

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IS43TR81280A-187FBL Integrated Silicon Solution Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTEGRATED SILICON SOLUTION INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.32
Access Time-Max 0.255 ns 13.125 ns
Clock Frequency-Max (fCLK) 667 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-30 Code R-PBGA-B78 R-PBGA-B78
Memory Density 2147483648 bit 1073741824 bit
Memory IC Type DDR3 DRAM DDR DRAM
Memory Width 8 8
Number of Terminals 78 78
Number of Words 268435456 words 134217728 words
Number of Words Code 256000000 128000000
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min
Organization 256MX8 128MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 8
Standby Current-Max 0.012 A
Supply Current-Max 0.135 mA
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Part Package Code BGA
Package Description TFBGA,
Pin Count 78
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY
Length 10.5 mm
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Width 8 mm

Compare K4B2G0846D-HCH9 with alternatives

Compare IS43TR81280A-187FBL with alternatives