K4B2G0846D-HCH9
vs
K4B2G0846B-HCH9T
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Access Time-Max |
0.255 ns
|
0.255 ns
|
| Clock Frequency-Max (fCLK) |
667 MHz
|
667 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
8
|
8
|
| JESD-30 Code |
R-PBGA-B78
|
R-PBGA-B78
|
| Memory Density |
2147483648 bit
|
2147483648 bit
|
| Memory IC Type |
DDR3 DRAM
|
DDR3 DRAM
|
| Memory Width |
8
|
8
|
| Number of Terminals |
78
|
78
|
| Number of Words |
268435456 words
|
268435456 words
|
| Number of Words Code |
256000000
|
256000000
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
|
|
| Organization |
256MX8
|
256MX8
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
FBGA
|
FBGA
|
| Package Equivalence Code |
BGA78,9X13,32
|
BGA78,9X13,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, FINE PITCH
|
GRID ARRAY, FINE PITCH
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
8192
|
8192
|
| Sequential Burst Length |
8
|
8
|
| Standby Current-Max |
0.012 A
|
0.012 A
|
| Supply Current-Max |
0.135 mA
|
0.28 mA
|
| Supply Voltage-Nom (Vsup) |
1.5 V
|
1.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
3
|
1
|
| JESD-609 Code |
|
e1
|
| Moisture Sensitivity Level |
|
3
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare K4B2G0846D-HCH9 with alternatives
Compare K4B2G0846B-HCH9T with alternatives