K4B2G0846D-HCH9
vs
K4B2G0846B-HCH90
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Time-Max
0.255 ns
0.25 ns
Clock Frequency-Max (fCLK)
667 MHz
667 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
8
8
JESD-30 Code
R-PBGA-B78
R-PBGA-B78
Memory Density
2147483648 bit
2147483648 bit
Memory IC Type
DDR3 DRAM
DDR3 DRAM
Memory Width
8
8
Number of Terminals
78
78
Number of Words
268435456 words
268435456 words
Number of Words Code
256000000
256000000
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
Organization
256MX8
256MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA78,9X13,32
BGA78,9X13,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
8
8
Standby Current-Max
0.012 A
0.012 A
Supply Current-Max
0.135 mA
0.28 mA
Supply Voltage-Nom (Vsup)
1.5 V
1.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
3
1
Pbfree Code
Part Package Code
BGA
Package Description
TFBGA, BGA78,9X13,32
Pin Count
78
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
JESD-609 Code
e1
Length
11.5 mm
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Peak Reflow Temperature (Cel)
260
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Terminal Finish
TIN SILVER COPPER
Width
9 mm
Compare K4B2G0846D-HCH9 with alternatives
Compare K4B2G0846B-HCH90 with alternatives