K4B2G0846B-HCH9T
vs
MT41J512M8THD-15
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
MICRON TECHNOLOGY INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.24
Access Time-Max
0.255 ns
1.5 ns
Clock Frequency-Max (fCLK)
667 MHz
I/O Type
COMMON
Interleaved Burst Length
8
JESD-30 Code
R-PBGA-B78
R-PBGA-B78
JESD-609 Code
e1
e1
Memory Density
2147483648 bit
268435456 bit
Memory IC Type
DDR3 DRAM
DDR3 DRAM
Memory Width
8
8
Moisture Sensitivity Level
3
Number of Terminals
78
78
Number of Words
268435456 words
33554432 words
Number of Words Code
256000000
32000000
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
256MX8
32MX8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA78,9X13,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
8
Standby Current-Max
0.012 A
Supply Current-Max
0.28 mA
Supply Voltage-Nom (Vsup)
1.5 V
1.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
Terminal Finish
TIN SILVER COPPER
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
78
Access Mode
DUAL BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Length
11.5 mm
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Width
8 mm
Compare K4B2G0846B-HCH9T with alternatives
Compare MT41J512M8THD-15 with alternatives