K4B1G0446E-HCK00
vs
EDJ2104BASE-8C-F
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
MICRON TECHNOLOGY INC
|
| Part Package Code |
BGA
|
|
| Package Description |
TFBGA, BGA78,9X13,32
|
,
|
| Pin Count |
78
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.32
|
|
| Access Mode |
MULTI BANK PAGE BURST
|
|
| Access Time-Max |
0.225 ns
|
|
| Additional Feature |
AUTO/SELF REFRESH
|
|
| Clock Frequency-Max (fCLK) |
800 MHz
|
|
| I/O Type |
COMMON
|
|
| Interleaved Burst Length |
4,8
|
|
| JESD-30 Code |
R-PBGA-B78
|
|
| JESD-609 Code |
e1
|
|
| Length |
11 mm
|
|
| Memory Density |
1073741824 bit
|
|
| Memory IC Type |
DDR3 DRAM
|
|
| Memory Width |
4
|
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
78
|
|
| Number of Words |
268435456 words
|
|
| Number of Words Code |
256000000
|
|
| Operating Mode |
SYNCHRONOUS
|
|
| Operating Temperature-Max |
95 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
256MX4
|
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Code |
TFBGA
|
|
| Package Equivalence Code |
BGA78,9X13,32
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
|
| Refresh Cycles |
8192
|
|
| Seated Height-Max |
1.2 mm
|
|
| Self Refresh |
YES
|
|
| Sequential Burst Length |
4,8
|
|
| Supply Voltage-Max (Vsup) |
1.575 V
|
|
| Supply Voltage-Min (Vsup) |
1.425 V
|
|
| Supply Voltage-Nom (Vsup) |
1.5 V
|
|
| Surface Mount |
YES
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
OTHER
|
|
| Terminal Finish |
TIN SILVER COPPER
|
|
| Terminal Form |
BALL
|
|
| Terminal Pitch |
0.8 mm
|
|
| Terminal Position |
BOTTOM
|
|
| Width |
7.5 mm
|
|
| Base Number Matches |
1
|
2
|
|
|
|
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