K3N3V1000D-DC10
vs
LH534096D
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SHARP CORP
|
| Part Package Code |
DIP
|
|
| Package Description |
DIP, DIP40,.6
|
DIP-40
|
| Pin Count |
40
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.71
|
|
| Access Time-Max |
100 ns
|
100 ns
|
| Additional Feature |
ALL INPUTS AND OUTPUTS TTL COMPATIBLE
|
|
| Alternate Memory Width |
8
|
|
| JESD-30 Code |
R-PDIP-T40
|
R-PDIP-T40
|
| JESD-609 Code |
e0
|
|
| Length |
52.42 mm
|
52 mm
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
40
|
40
|
| Number of Words |
262144 words
|
262144 words
|
| Number of Words Code |
256000
|
256000
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
70 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
256KX16
|
256KX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP40,.6
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.4 mm
|
| Standby Current-Max |
0.00003 A
|
|
| Supply Current-Max |
0.025 mA
|
0.075 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
15.24 mm
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare K3N3V1000D-DC10 with alternatives
Compare LH534096D with alternatives