JDH2S02SC
vs
BAT62-02LS
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
R-XBCC-N2
|
R-XBCC-N2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.60
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
MIXER DIODE
|
MIXER DIODE
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
R-XBCC-N2
|
R-XBCC-N2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DFN
|
| Diode Capacitance-Max |
|
0.6 pF
|
| Forward Voltage-Max (VF) |
|
1 V
|
| JESD-609 Code |
|
e3
|
| Power Dissipation-Max |
|
0.1 W
|
| Rep Pk Reverse Voltage-Max |
|
40 V
|
| Terminal Finish |
|
MATTE TIN
|
| Type of Schottky Barrier |
|
LOW BARRIER
|
|
|
|