JANTXV2N7227U
vs
JAN2N7227U
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Part Package Code
TO-276AB
TO-276AB
Package Description
U-PKG-3
U-PKG-3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Microsemi Corporation
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
700 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.415 Ω
0.415 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-276AB
TO-276AB
JESD-30 Code
R-XBCC-N3
R-XBCC-N3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
Compare JANTXV2N7227U with alternatives
Compare JAN2N7227U with alternatives