JANTXV2N7227
vs
JANTXV2N7227
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SEMICOA CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
700 mJ
700 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.415 Ω
0.415 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-254AA
JESD-30 Code
S-MSFM-P3
S-XSFM-P3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
UNSPECIFIED
Package Shape
SQUARE
SQUARE
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
56 A
56 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/592
MIL-19500
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
HERMETIC SEALED PACKAGE-3
Compare JANTXV2N7227 with alternatives
Compare JANTXV2N7227 with alternatives