JANTXV2N7225U
vs
JANTXV2N7225
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
TO-276AB
|
|
| Package Description |
U3, U PKG-3
|
TO-254AA, 3 PIN
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Microsemi Corporation
|
Infineon
|
| Additional Feature |
AVALANCHE RATED
|
HIGH RELIABILITY
|
| Avalanche Energy Rating (Eas) |
500 mJ
|
500 mJ
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
27.4 A
|
27.4 A
|
| Drain-source On Resistance-Max |
0.105 Ω
|
0.105 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-276AB
|
TO-254AA
|
| JESD-30 Code |
R-XBCC-N3
|
S-MSFM-P3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
METAL
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
110 A
|
110 A
|
| Qualification Status |
Qualified
|
Qualified
|
| Reference Standard |
MIL-19500/592
|
MIL-19500/592
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
NO LEAD
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
150 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JANTXV2N7225U with alternatives
Compare JANTXV2N7225 with alternatives