JANTXV2N7224
vs
IRFM150R1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
SEMICOA CORP
TT ELECTRONICS PLC
Package Description
HERMETIC SEALED PACKAGE-3
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
150 mJ
150 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
34 A
34 A
Drain-source On Resistance-Max
0.07 Ω
0.081 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-254AA
JESD-30 Code
S-XSFM-P3
S-MSFM-P3
JESD-609 Code
e0
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
METAL
Package Shape
SQUARE
SQUARE
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
136 A
136 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN SILVER COPPER
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
8
2
Additional Feature
AVALANCHE RATED
Case Connection
ISOLATED
Operating Temperature-Max
150 °C
Compare JANTXV2N7224 with alternatives
Compare IRFM150R1 with alternatives