JANTXV2N6784
vs
IRFF212
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
48 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
2.25 A
1.8 A
Drain-source On Resistance-Max
1.725 Ω
2.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
15 W
15 W
Pulsed Drain Current-Max (IDM)
9 A
7.5 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/556
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
HTS Code
8541.29.00.95
Case Connection
DRAIN
Power Dissipation Ambient-Max
15 W
Turn-off Time-Max (toff)
30 ns
Turn-on Time-Max (ton)
40 ns
Compare JANTXV2N6784 with alternatives
Compare IRFF212 with alternatives