JANTXV2N6760
vs
JANTXV2N6760
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
UNITRODE CORP
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
5.5 A
5.5 A
Drain-source On Resistance-Max
1 Ω
1.22 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
80 pF
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
8 A
22 A
Qualification Status
Not Qualified
Qualified
Reference Standard
MILITARY STANDARD (USA)
MIL-19500/542
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
65 ns
Base Number Matches
1
1
Rohs Code
No
Package Description
TO-3, 2 PIN
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1.7 mJ
JESD-609 Code
e0
Power Dissipation-Max (Abs)
75 W
Terminal Finish
Tin/Lead (Sn/Pb)
Compare JANTXV2N6760 with alternatives
Compare JANTXV2N6760 with alternatives