JANTXV2N6760 vs 2N6760 feature comparison

JANTXV2N6760 Intersil Corporation

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2N6760 Infineon Technologies AG

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERSIL CORP INFINEON TECHNOLOGIES AG
Part Package Code TO-3
Package Description FORMERLY TO-3, 2 PIN
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature RADIATION HARDENED AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 5.5 A 5.5 A
Drain-source On Resistance-Max 1 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W 75 W
Pulsed Drain Current-Max (IDM) 8 A 22 A
Qualification Status Not Qualified Not Qualified
Reference Standard MILITARY STANDARD (USA) MILITARY STANDARD (USA)
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Avalanche Energy Rating (Eas) 1.7 mJ
Operating Temperature-Min -55 °C

Compare JANTXV2N6760 with alternatives

Compare 2N6760 with alternatives