JANTXV2N6758
vs
IRF231
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INTERSIL CORP
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
Part Package Code |
TO-3
|
|
Package Description |
FORMERLY TO-3, 2 PIN
|
|
Pin Count |
2
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
150 V
|
Drain Current-Max (ID) |
9 A
|
9 A
|
Drain-source On Resistance-Max |
0.4 Ω
|
0.4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-204AA
|
TO-3
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
75 W
|
75 W
|
Pulsed Drain Current-Max (IDM) |
15 A
|
36 A
|
Qualification Status |
Not Qualified
|
|
Reference Standard |
MILITARY STANDARD (USA)
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
8
|
12
|
Feedback Cap-Max (Crss) |
|
150 pF
|
Operating Temperature-Min |
|
-55 °C
|
Turn-off Time-Max (toff) |
|
90 ns
|
Turn-on Time-Max (ton) |
|
80 ns
|
|
|
|
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