JANTXV2N6756
vs
IRF141
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
MOTOROLA INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
60 V
Drain Current-Max (ID)
14 A
27 A
Drain-source On Resistance-Max
0.18 Ω
0.085 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
150 pF
300 pF
JEDEC-95 Code
TO-204AA
TO-204AE
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
75 W
125 W
Pulsed Drain Current-Max (IDM)
30 A
108 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Finish
NOT SPECIFIED
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
85 ns
110 ns
Turn-on Time-Max (ton)
105 ns
90 ns
Base Number Matches
1
1
Rohs Code
Package Description
FLANGE MOUNT, O-MBFM-P2
JESD-609 Code
e0
Power Dissipation-Max (Abs)
150 W
Compare JANTXV2N6756 with alternatives
Compare IRF141 with alternatives