JANTXV2N6661UB
vs
2N6661UB
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VPT COMPONENTS
|
VPT COMPONENTS
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
8541.21.00.95
|
Date Of Intro |
2020-08-03
|
2020-08-03
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
90 V
|
90 V
|
Drain Current-Max (ID) |
0.86 A
|
0.86 A
|
Drain-source On Resistance-Max |
4 Ω
|
4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
10 pF
|
10 pF
|
JESD-30 Code |
R-XDSO-N3
|
R-XDSO-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.57 W
|
0.57 W
|
Power Dissipation-Max (Abs) |
2.5 W
|
2.5 W
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
SMALL OUTLINE, R-XDSO-N3
|
|
|
|